参数项参数值
参数项参数值
DC Current Gain hFE Max390
Gain Bandwidth Product fT180 Mhz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.15 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.15 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Collector-Emitter Saturation Voltage0.4 V
Width0.8 mm
Height0.5 mm
Length1.2 mm
DC Collector/Base Gain hfe Min120
MXHTS85412999
KRHTS8541299000
Package / CaseVMT-3
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
Factory Pack Quantity8000
CNHTS8541290000
DescriptionBipolar Transistors - BJT NPN 50V 150MA
BrandROHM Semiconductor
ImageROHM Semiconductor 2SC5658T2LS
Series2SC5658
Product TypeBJTs - Bipolar Transistors
TARIC8541290000
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000520 oz
SubcategoryTransistors
Pd - Power Dissipation150 mW
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)