SI2300DS-T1-GE3

SI2300DS-T1-GE3

厂牌：VISHAY

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000051982593

描述：MOSFET N-CH 30V SOT-23

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min13 S

ConfigurationSingle

Id - Continuous Drain Current3.6 A

Transistor PolarityN-Channel

Vgs th - Gate-Source Threshold Voltage600 mV

TechnologySi

Rds On - Drain-Source Resistance68 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time20 ns

Height1.45 mm

Vgs - Gate-Source Voltage- 12 V, + 12 V

Typical Turn-On Delay Time10 ns

Length2.9 mm

MXHTS85412101

Width1.6 mm

KRHTS8541219000

RoHS Details

Mounting StyleSMD/SMT

Product TypeMOSFET

USHTS8541210095

Package / CaseSOT-23-3

Qg - Gate Charge6.5 nC

JPHTS8541210101

CAHTS8541210000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

TARIC8541290000

PackagingReel

PackagingCut Tape

PackagingMouseReel

CNHTS8541290000

Channel ModeEnhancement

SubcategoryMOSFETs

ManufacturerVishay

SeriesSI2

Factory Pack Quantity3000

Product CategoryMOSFET

Fall Time11 ns

Unit Weight0.000282 oz

BrandVishay Semiconductors

DescriptionMOSFET 30V Vds 12V Vgs SOT-23

Pd - Power Dissipation1.7 W

Part # AliasesSI2300DS-GE3

Vds - Drain-Source Breakdown Voltage30 V

TradenameTrenchFET

Number of Channels1 Channel

Rise Time15 ns