IRF640NPBF

厂牌:Infineon Technologies
包装:REEL 1
类目:元器件 > 分立器件 > MOSFET
编号:B000051985155
描述:Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube
最新价格近期成交1单+
数量价格(含税)
21¥5.1927
100¥5.1406
500¥5.0894
1000¥4.4464
4000¥4.2073
10000¥4.1655
库存:222,957交期:3-4 weeks起订:5增量:1
数量:
X
5.1927(单价)
合计:
¥25.96
商品满500包邮
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min6.8 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current18 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2 V
Rds On - Drain-Source Resistance150 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time23 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time10 ns
Minimum Operating Temperature- 55 C
CAHTS8541290000
Width4.4 mm
Height15.65 mm
Length10 mm
MXHTS85412999
Maximum Operating Temperature+ 175 C
KRHTS8541299000
Qg - Gate Charge44.7 nC
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET MOSFT 200V 18A 150mOhm 44.7nC
JPHTS8541290100
Package / CaseTO-220-3
Channel ModeEnhancement
Mounting StyleThrough Hole
CNHTS8541290000
Fall Time5.5 ns
PackagingTube
ImageInfineon Technologies IRF640NPBF
RoHS Details
TARIC8541290000
Unit Weight0.211644 oz
Product TypeMOSFET
Pd - Power Dissipation150 W
Factory Pack Quantity1000
BrandInfineon Technologies
Vds - Drain-Source Breakdown Voltage200 V
USHTS8541290095
Number of Channels1 Channel
Rise Time19 ns
Moisture Sensitivity Level1 (Unlimited)