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HGTG11N120CND

HGTG11N120CND

厂牌：onsemi
包装：TUBE 1
类目：元器件 > 分立器件 > IGBT晶体管
编号：B000051985173
描述：IGBT NPT N-CH 1200V 43A TO-247
最新价格近期成交33单+
数量价格（含税）
30¥37.3101
60¥36.5417
120¥35.8586
270¥33.9803
510¥33.5534
1020¥33.4681
2520¥33.3827
5010¥33.2974
库存：360交期：1-2 weeks起订：30增量：1
数量：
X
37.3101（单价）
合计：
￥1119.30
商品满500包邮
商品参数
参数项参数值
参数项参数值
Gate-Emitter Leakage Current+/- 250 nA
Maximum Gate Emitter Voltage20 V
Collector- Emitter Voltage VCEO Max1200 V
ConfigurationSingle
Continuous Collector Current55 A
TechnologySi
Width4.82 mm
Height20.82 mm
Collector-Emitter Saturation Voltage2.1 V
Length15.87 mm
MXHTS85412999
KRHTS8541299000
DescriptionIGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde
Unit Weight0.225401 oz
JPHTS8541290100
Package / CaseTO-247-3
Mounting StyleThrough Hole
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingTube
Maximum Operating Temperature+ 150 C
Factory Pack Quantity450
BrandON Semiconductor / Fairchild
ImageON Semiconductor / Fairchild HGTG11N120CND
SeriesHGTG11N120CND
RoHS Details
CNHTS8541290000
Product TypeIGBT Transistors
TARIC8541290000
ManufacturerON Semiconductor
Product CategoryIGBT Transistors
SubcategoryIGBTs
Continuous Collector Current at 25 C43 A
Pd - Power Dissipation298 W
Continuous Collector Current Ic Max43 A
Part # AliasesHGTG11N120CND_NL
USHTS8541290095