在线商城 
IRF630NPBF
厂牌：Infineon Technologies
包装：TUBE 1
类目：元器件 > 分立器件 > MOSFET
编号：B000051985187
描述：MOSFET N-CH 200V 9.3A TO-220AB
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min4.9 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current9.3 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2 V
Rds On - Drain-Source Resistance300 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time27 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7.9 ns
Height15.65 mm
Minimum Operating Temperature- 55 C
Width4.4 mm
CAHTS8541290000
MXHTS85412999
Length10 mm
KRHTS8541299000
Qg - Gate Charge23.3 nC
SubcategoryMOSFETs
JPHTS8541290100
Package / CaseTO-220-3
Channel ModeEnhancement
Mounting StyleThrough Hole
CNHTS8541290000
Maximum Operating Temperature+ 175 C
PackagingTube
Fall Time15 ns
TARIC8541290000
ImageInfineon / IR IRF630NPBF
Unit Weight0.211644 oz
RoHS Details
Factory Pack Quantity1000
BrandInfineon / IR
Pd - Power Dissipation82 W
Product TypeMOSFET
Product CategoryMOSFET
ManufacturerInfineon
DescriptionMOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
Vds - Drain-Source Breakdown Voltage200 V
USHTS8541290095
Number of Channels1 Channel
Rise Time14 ns
Moisture Sensitivity Level1 (Unlimited)