参数项参数值
参数项参数值
DC Current Gain hFE Max250
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max80 V
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage500 mV
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min40
Width3.7 mm
Length6.7 mm
Height1.65 mm
JPHTS8541290100
MXHTS85412999
PackagingCut Tape
PackagingMouseReel
PackagingReel
KRHTS8541299000
BrandDiodes Incorporated
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Package / CaseSOT-89-3
Minimum Operating Temperature- 65 C
CAHTS8541290000
CNHTS8541290000
TARIC8541290000
RoHS Details
Pd - Power Dissipation1000 mW
SeriesBCX56
DescriptionBipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K
ImageDiodes Incorporated BCX56TA
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerDiodes Incorporated
USHTS8541290075
Moisture Sensitivity Level1 (Unlimited)