参数项参数值
参数项参数值
Forward Transconductance - Min6.8 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current18 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2 V
Rds On - Drain-Source Resistance150 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time23 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time10 ns
Minimum Operating Temperature- 55 C
CAHTS8541290000
Width4.4 mm
Height15.65 mm
Length10 mm
MXHTS85412999
Maximum Operating Temperature+ 175 C
KRHTS8541299000
Qg - Gate Charge44.7 nC
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET MOSFT 200V 18A 150mOhm 44.7nC
JPHTS8541290100
Package / CaseTO-220-3
Channel ModeEnhancement
Mounting StyleThrough Hole
CNHTS8541290000
Fall Time5.5 ns
PackagingTube
ImageInfineon Technologies IRF640NPBF
RoHS Details
TARIC8541290000
Unit Weight0.211644 oz
Product TypeMOSFET
Pd - Power Dissipation150 W
Factory Pack Quantity1000
BrandInfineon Technologies
Vds - Drain-Source Breakdown Voltage200 V
USHTS8541290095
Number of Channels1 Channel
Rise Time19 ns
Moisture Sensitivity Level1 (Unlimited)