HGTG11N120CND

HGTG11N120CND

厂牌：ON Semiconductor

包装：TUBE 1

类目：元器件 > 分立器件 > IGBT晶体管

编号：B000051985396

描述：IGBT NPT N-CH 1200V 43A TO-247

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商品参数

参数项参数值

参数项参数值

Gate-Emitter Leakage Current+/- 250 nA

Maximum Gate Emitter Voltage20 V

Collector- Emitter Voltage VCEO Max1200 V

ConfigurationSingle

Continuous Collector Current55 A

TechnologySi

Width4.82 mm

Height20.82 mm

Collector-Emitter Saturation Voltage2.1 V

Length15.87 mm

MXHTS85412999

KRHTS8541299000

DescriptionIGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde

Unit Weight0.225401 oz

JPHTS8541290100

Package / CaseTO-247-3

Mounting StyleThrough Hole

CAHTS8541290000

Minimum Operating Temperature- 55 C

PackagingTube

Maximum Operating Temperature+ 150 C

Factory Pack Quantity450

BrandON Semiconductor / Fairchild

ImageON Semiconductor / Fairchild HGTG11N120CND

SeriesHGTG11N120CND

RoHS Details

CNHTS8541290000

Product TypeIGBT Transistors

TARIC8541290000

ManufacturerON Semiconductor

Product CategoryIGBT Transistors

SubcategoryIGBTs

Continuous Collector Current at 25 C43 A

Pd - Power Dissipation298 W

Continuous Collector Current Ic Max43 A

Part # AliasesHGTG11N120CND_NL

USHTS8541290095