参数项参数值
参数项参数值
DC Current Gain hFE Max63 at 5 mA, 2 V
Gain Bandwidth Product fT180 Mhz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max80 V
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min63 at 5 mA, 2 V, 63 at 150 mA, 2 V, 40 at 500 mA, 2 V
QualificationAEC-Q101
Width2.6 mm
Length4.6 mm
Height1.6 mm
MXHTS85412999
ImageNexperia BCX56,135
KRHTS8541299000
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Package / CaseSOT-89-3
Minimum Operating Temperature- 65 C
CAHTS8541290000
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541290000
Unit Weight0.004603 oz
RoHS Details
Pd - Power Dissipation1250 mW
DescriptionBipolar Transistors - BJT TRANS MED PWR TAPE13
Part # Aliases933272330135
BrandNexperia
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity4000
SubcategoryTransistors
ManufacturerNexperia
Product CategoryBipolar Transistors - BJT
USHTS8541290075