参数项参数值
参数项参数值
DC Current Gain hFE Max25 at 5 mA, 2 V
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO- 100 V
Maximum DC Collector Current- 2 A
Collector- Emitter Voltage VCEO Max- 80 V
TechnologySi
ConfigurationSingle
Transistor PolarityPNP
Collector-Emitter Saturation Voltage- 500 mV
Emitter- Base Voltage VEBO- 5 V
DC Collector/Base Gain hfe Min25 at 500 mA, 2 V
Width2.5 mm
Length4.5 mm
Height1.5 mm
MXHTS85412999
ImageDiodes Incorporated BCX53TA
KRHTS8541299000
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Package / CaseSOT-89-3
CAHTS8541290000
Minimum Operating Temperature- 65 C
CNHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541290000
Pd - Power Dissipation1000 mW
RoHS Details
DescriptionBipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K
SeriesBCX53
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity1000
SubcategoryTransistors
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)