SI7135DP-T1-GE3

SI7135DP-T1-GE3

厂牌：VISHAY

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000051986099

描述：MOSFET P-CH 30V 60A PPAK 8SOIC

下载数据手册

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min95 S

TechnologySi

ConfigurationSingle

Id - Continuous Drain Current60 A

Transistor PolarityP-Channel

Vgs th - Gate-Source Threshold Voltage1 V

Rds On - Drain-Source Resistance3.9 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time110 ns

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time25 ns

Height1.04 mm

Width5.15 mm

Minimum Operating Temperature- 55 C

CAHTS8541290000

MXHTS85412999

Length6.15 mm

Qg - Gate Charge167 nC

KRHTS8541299000

SubcategoryMOSFETs

JPHTS8541290100

Package / CasePowerPAK-SO-8

Channel ModeEnhancement

Mounting StyleSMD/SMT

CNHTS8541290000

Maximum Operating Temperature+ 150 C

PackagingCut Tape

PackagingMouseReel

PackagingReel

Fall Time30 ns

TARIC8541290000

Unit Weight0.017870 oz

ImageVishay Semiconductors SI7135DP-T1-GE3

BrandVishay Semiconductors

Pd - Power Dissipation104 W

Factory Pack Quantity3000

SeriesSI7

Part # AliasesSI7135DP-GE3

Product TypeMOSFET

ManufacturerVishay

Product CategoryMOSFET

DescriptionMOSFET -30V Vds 20V Vgs PowerPAK SO-8

Vds - Drain-Source Breakdown Voltage30 V

USHTS8541290095

TradenameTrenchFET

Number of Channels1 Channel

Rise Time15 ns