参数项参数值
参数项参数值
DC Current Gain hFE Max340
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 60 V
Maximum DC Collector Current- 600 mA
Collector- Emitter Voltage VCEO Max- 60 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
QualificationAEC-Q101
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
BrandON Semiconductor
CNHTS8541290000
ManufacturerON Semiconductor
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SeriesMMBT2907AW
TARIC8541290000
RoHS Details
ImageON Semiconductor NSVMMBT2907AWT1G
DescriptionBipolar Transistors - BJT PNP Bipolar Transistor
SubcategoryTransistors
Unit Weight0.000176 oz
USHTS8541290095
Pd - Power Dissipation150 mW
Moisture Sensitivity Level1 (Unlimited)