NVTFS5C658NLWFTAG

厂牌:ONSEMI
包装:REEL 1
类目:元器件 > 分立器件 > MOSFET
编号:B000051986569
描述:ONSEMI - NVTFS5C658NLWFTAG - 功率场效应管, MOSFET, N通道, 60 V, 109 A, 4200 µohm, WDFN, 表面安装 库存分布: Shanghai: 0 Shanghai: 0 Shanghai: 0 Shanghai: 0 Shanghai: 0 UK: 981 SG: 0; packSize: 1; minimumOrderQty: 100; rohs: Y-EX
最新价格近期成交24单+
数量价格(含税)
1¥27.0696
10¥17.3266
100¥11.8775
500¥9.6676
1000¥7.9601
5000¥7.8094
库存:981交期:2 weeks起订:100增量:1
数量:
X
11.8775(单价)
合计:
¥1187.75
商品满500包邮
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min100 s
ConfigurationSingle
Transistor PolarityN-Channel
Id - Continuous Drain Current109 A
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Rds On - Drain-Source Resistance4.2 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time36 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time16 ns
JPHTS8541290100
CAHTS8541290000
MXHTS85412999
KRHTS8541299000
RoHS Details
USHTS8541290095
Product CategoryMOSFET
Mounting StyleSMD/SMT
Qg - Gate Charge27 nC
Package / CaseWDFN-8
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
CNHTS8541290000
Channel ModeEnhancement
SubcategoryMOSFETs
TARIC8541290000
Factory Pack Quantity1500
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor NVTFS5C658NLWFTAG
Product TypeMOSFET
SeriesNVTFS5C658NL
BrandON Semiconductor
Fall Time105 ns
ManufacturerON Semiconductor
Unit Weight0.000600 oz
DescriptionMOSFET AFSM T6 60V LL U8FL WF
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time96 ns