参数项参数值
参数项参数值
ConfigurationDual
Forward Transconductance - Min100 mS
Id - Continuous Drain Current115 mA
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Rds On - Drain-Source Resistance3 Ohms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time40 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time20 ns
Package / CaseSOT-363-6
Product CategoryMOSFET
ManufacturerPanjit
Unit Weight0.000280 oz
Qg - Gate Charge0.8 nC
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
BrandPanjit
RoHS Details
TARIC8541290000
Product TypeMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
DescriptionMOSFET K27/TR/7"/RoHS/3K/SOT-363/MOS/SOT/NFET-035TS/NF035T-QI17/PJ///
USHTS8541100080
Pd - Power Dissipation200 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels2 Channel