参数项参数值
参数项参数值
Forward Transconductance - Min38 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current12.5 A
Transistor PolarityN-Channel
Rds On - Drain-Source Resistance10.2 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
MXHTS85412999
Typical Turn-On Delay Time12 ns
Width6.22 mm
KRHTS8541299000
Length6.73 mm
JPHTS8541290100
CNHTS8541290000
CAHTS8541290000
Qg - Gate Charge35 nC
Product TypeMOSFET
Package / CaseTO-252-3
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time3.9 ns
TARIC8541290000
BrandON Semiconductor / Fairchild
SeriesFDD86110
Unit Weight0.009184 oz
RoHS Details
Factory Pack Quantity2500
ImageON Semiconductor / Fairchild FDD86110
Product CategoryMOSFET
Pd - Power Dissipation3.1 W
ManufacturerON Semiconductor
SubcategoryMOSFETs
USHTS8541290095
Vds - Drain-Source Breakdown Voltage100 V
DescriptionMOSFET 100V N-Channel PowerTrench MOSFET
TradenamePowerTrench
Number of Channels1 Channel
Rise Time5.4 ns
Moisture Sensitivity Level1 (Unlimited)