RSF015N06TL

厂牌：ROHM Semiconductor

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000052005234

描述：MOSFET N-CH 60V 1.5A TUMT; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.21ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:800mW; Transistor Case Style:TUMT; No. of Pins:3Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

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商品参数

参数项参数值

ConfigurationSingle

Id - Continuous Drain Current1.5 A

Transistor PolarityN-Channel

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Rds On - Drain-Source Resistance290 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time15 ns

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time6 ns

RoHS Details

MXHTS85412999

ImageROHM Semiconductor RSF015N06TL

KRHTS8541299000

Mounting StyleSMD/SMT

Product TypeMOSFET

ManufacturerROHM Semiconductor

DescriptionMOSFET 4V Drive Nch MOSFET Drive Nch

JPHTS8541290100

Qg - Gate Charge2 nC

CAHTS8541290000

Package / CaseSOT-323-3

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

PackagingCut Tape

PackagingMouseReel

PackagingReel

TARIC8541290000

CNHTS8541290000

Channel ModeEnhancement

SeriesRSF015N06

SubcategoryMOSFETs

Factory Pack Quantity3000

Unit Weight0.001075 oz

Fall Time10 ns

BrandROHM Semiconductor

Product CategoryMOSFET

USHTS8541290095

Pd - Power Dissipation800 mW

Part # AliasesRSF015N06

Vds - Drain-Source Breakdown Voltage60 V

Number of Channels1 Channel

Rise Time9 ns

Moisture Sensitivity Level1 (Unlimited)