CSD25213W10

CSD25213W10

厂牌：TI(德州仪器)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000052021192

描述：场效应管(MOSFET) 1W 20V 1.6A 1个P沟道

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage850 mV

TechnologySi

Transistor PolarityP-Channel

Id - Continuous Drain Current1.6 A

MXHTS85423901

Vgs - Gate-Source Voltage- 6 V, + 6 V

Typical Turn-On Delay Time510 ns

Length1 mm

Width1 mm

Height0.62 mm

KRHTS8541299000

Rds On - Drain-Source Resistance67 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time1 us

Minimum Operating Temperature- 55 C

JPHTS8541290100

Package / CaseDSBGA-4

CAHTS8541290000

CNHTS8541290000

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 150 C

Factory Pack Quantity3000

PackagingCut Tape

PackagingMouseReel

PackagingReel

ImageTexas Instruments CSD25213W10

BrandTexas Instruments

Product TypeMOSFET

TARIC8542399000

DescriptionMOSFET P-CH NexFET Pwr MOSFET

RoHS Details

Product CategoryMOSFET

SeriesCSD25213W10

ManufacturerTexas Instruments

SubcategoryMOSFETs

Channel ModeEnhancement

Fall Time970 ns

Unit Weight0.000039 oz

USHTS8541290095

Pd - Power Dissipation1 W

TradenameNexFET

Vds - Drain-Source Breakdown Voltage20 V

Number of Channels1 Channel

Rise Time520 ns