参数项参数值
参数项参数值
Gain Bandwidth Product fT120 MHz
Collector- Base Voltage VCBO- 100 V
Maximum DC Collector Current5.5 A
Collector- Emitter Voltage VCEO Max- 60 V
Continuous Collector Current- 5.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO7 V
Width3.7 mm
Collector-Emitter Saturation Voltage- 195 mV
Height1.65 mm
MXHTS85412999
Length6.7 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageDiodes Incorporated ZXTP2012GTA
TARIC8541290000
RoHS Details
SeriesZXTP2012
SubcategoryTransistors
Factory Pack Quantity1000
Product CategoryBipolar Transistors - BJT
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Unit Weight0.003951 oz
DescriptionBipolar Transistors - BJT 60V PNP Low Sat
ManufacturerDiodes Incorporated
USHTS8541290075
Pd - Power Dissipation3 W