参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current335 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 16 V, + 16 V
Typical Turn-On Delay Time3.7 ns
Rds On - Drain-Source Resistance4 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time102 ns
Minimum Operating Temperature- 55 C
Package / CaseSOT-23-3
CNHTS8541210000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Qg - Gate Charge0.4 pC
Factory Pack Quantity3000
ImageDiodes Incorporated DMN65D9L-7
PackagingCut Tape
PackagingMouseReel
PackagingReel
Product TypeMOSFET
BrandDiodes Incorporated
DescriptionMOSFET MOSFET BVDSS: 41V 60V SOT23 T&R 3K
TARIC8541290000
RoHS Details
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerDiodes Incorporated
Channel ModeEnhancement
Fall Time22 ns
USHTS8541210095
Pd - Power Dissipation270 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time3.6 ns