参数项参数值
参数项参数值
DC Current Gain hFE Max560 at 1 mA, 6 V
Gain Bandwidth Product fT350 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max50 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Collector-Emitter Saturation Voltage0.1 V
Emitter- Base Voltage VEBO5 V
MXHTS85423901
DC Collector/Base Gain hfe Min120
CNHTS8541210000
RoHS Details
DescriptionBipolar Transistors - BJT NPN General Purpose Amplification Transistor
Package / CaseEMT-3F-3
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
CAHTS8541210000
JPHTS8542390990
BrandROHM Semiconductor
TARIC8542399000
Series2SCR523EB
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SCR523EBTL
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation150 mW
Part # Aliases2SCR523EB
USHTS8542390001
Moisture Sensitivity Level1 (Unlimited)