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商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min280 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current200 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2.9 V
Rds On - Drain-Source Resistance1.1 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time78 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time17 ns
CAHTS8541290000
Height0.74 mm
Minimum Operating Temperature- 55 C
Width7.1 mm
Length9.15 mm
Maximum Operating Temperature+ 175 C
MXHTS85423102
KRHTS8541299000
Qg - Gate Charge200 nC
SubcategoryMOSFETs
Product CategoryMOSFET
JPHTS8541290100
Package / CaseDirectFET-L8
Channel ModeEnhancement
Mounting StyleSMD/SMT
CNHTS8541290000
Fall Time39 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
RoHS Details
TARIC8542319000
ImageInfineon / IR IRF7749L1TRPBF
Unit Weight0.026031 oz
Factory Pack Quantity4000
Pd - Power Dissipation125 W
Product TypeMOSFET
DescriptionMOSFET N-Ch 60V 1.1mOhm 200nC 2.9V Hexfet
BrandInfineon / IR
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage60 V
TradenameDirectFET
USHTS8541290095
Number of Channels1 Channel
Rise Time43 ns