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商品参数
参数项参数值
参数项参数值
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO60 V
ConfigurationSingle
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current0.2 A
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO6 V
MXHTS85412101
Height0.94 mm
KRHTS8541219000
Collector-Emitter Saturation Voltage0.3 V
DC Collector/Base Gain hfe Min40
Factory Pack Quantity10000
Length2.9 mm
Width1.3 mm
PackagingReel
PackagingCut Tape
PackagingMouseReel
JPHTS8541210101
Minimum Operating Temperature- 55 C
Package / CaseSOT-23-3
CAHTS8541210000
CNHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
ImageON Semiconductor MMBT3904LT3G
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
TARIC8541210000
DescriptionBipolar Transistors - BJT 200mA 60V NPN
RoHS Details
Product CategoryBipolar Transistors - BJT
SeriesMMBT3904L
ManufacturerON Semiconductor
SubcategoryTransistors
Unit Weight0.001058 oz
USHTS8541210095
Pd - Power Dissipation225 mW
Moisture Sensitivity Level1 (Unlimited)