参数项参数值
参数项参数值
DC Current Gain hFE Max82
Gain Bandwidth Product fT180 Mhz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current6 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current3 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Width2.5 mm
Collector-Emitter Saturation Voltage105 mV
Height1.5 mm
DC Collector/Base Gain hfe Min45 at 1.5 A, 2 V
Length4.5 mm
MXHTS85412101
KRHTS8541219000
BRHTS85415020
Mounting StyleSMD/SMT
Package / CaseSOT-89-3
JPHTS8541210101
CAHTS8541500000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541210000
RoHS Details
ImageDiodes Incorporated 2DC4672-13
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryTransistors
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Factory Pack Quantity2500
Series2DC46
Product CategoryBipolar Transistors - BJT
USHTS8541500080
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 50V 3A NPN SMT
Pd - Power Dissipation2000 mW