参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.3 V
TechnologySi
Id - Continuous Drain Current30 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time16 ns
Rds On - Drain-Source Resistance13.9 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time41 ns
Qg - Gate Charge24.5 nC
Package / CaseHSMT-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time14 ns
PackagingReel
PackagingCut Tape
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RQ3L090GNTB
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation20 W
Part # AliasesRQ3L090GN
DescriptionMOSFET 60V N-CHANNEL 30A
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time14 ns