参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Transistor PolarityN-Channel, P-Channel
Id - Continuous Drain Current1.066 A, 845 mA
Vgs - Gate-Source Voltage- 6 V, + 6 V
Typical Turn-On Delay Time5.1 ns, 5.1 ns
Rds On - Drain-Source Resistance450 mOhms, 750 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time26.7 ns, 28.4 ns
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
ProductMOSFET Small Signal
Package / CaseSOT-363-6
PackagingMouseReel
PackagingCut Tape
PackagingReel
Qg - Gate Charge736.6 nC, 622.4 pC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMG1016UDW-7
Factory Pack Quantity3000
SeriesDMG1016
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 20V Vdss 6V VGSS Complementary Pair
Channel ModeEnhancement
Fall Time12.3 ns, 20.72 ns
Unit Weight0.000212 oz
Pd - Power Dissipation330 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time7.4 ns, 8.1 ns