BC857BLP4Q-7B

厂牌：Diodes Incorporated

包装：--

类目：--

编号：B000052190719

描述：Bipolar Transistors - BJT General Purpose Transistor U-DFN1006-3 T&R 10K

商品参数

参数项参数值

PackagingTape & Reel (TR)

Package / Case3-UFDFN

Mounting TypeSurface Mount, Wettable Flank

Transistor TypePNP

Operating Temperature-55°C ~ 150°C (TJ)

Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA

Current - Collector Cutoff (Max)15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce220 @ 2mA, 5V

Frequency - Transition100MHz

Supplier Device PackageU-DFN1006-3/SWP (Type UX)

GradeAutomotive

Current - Collector (Ic) (Max)100 mA

Voltage - Collector Emitter Breakdown (Max)45 V

Power - Max255 mW

QualificationAEC-Q101