参数项参数值
参数项参数值
DC Current Gain hFE Max475
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 50 V
Collector- Emitter Voltage VCEO Max- 45 V
Continuous Collector Current- 100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
MXHTS85412101
DC Collector/Base Gain hfe Min220
KRHTS8541219000
Package / CaseX2-DFN0606-3
CNHTS8541210000
JPHTS8541210101
Mounting StyleSMD/SMT
CAHTS8541210000
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
ImageDiodes Incorporated BC857BFZ-7B
TARIC8541210000
RoHS Details
Factory Pack Quantity10000
SeriesBC857B
Unit Weight0.000418 oz
ManufacturerDiodes Incorporated
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT PNP SS Trans -100mA 45Vceo 0.435W 175mV
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation350 mW
SubcategoryTransistors
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)