参数项参数值
参数项参数值
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO- 80 V
ConfigurationSingle
Maximum DC Collector Current- 500 mA
Collector- Emitter Voltage VCEO Max- 80 V
Continuous Collector Current- 500 mA
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 4 V
KRHTS8541219000
QualificationAEC-Q101
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Collector-Emitter Saturation Voltage- 0.25 V
Package / CaseSC-70-3
DC Collector/Base Gain hfe Min100
PackagingCut Tape
PackagingReel
PackagingMouseReel
Maximum Operating Temperature+ 150 C
BrandON Semiconductor
TARIC8541210000
Mounting StyleSMD/SMT
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT PNP Bipolar Transistor
ManufacturerON Semiconductor
Factory Pack Quantity10000
MXHTS85412101
RoHS Details
SeriesMMBTA56W
Product TypeBJTs - Bipolar Transistors
USHTS8541210095
Unit Weight0.000212 oz
CNHTS8541210000
Pd - Power Dissipation150 mW
Moisture Sensitivity Level1 (Unlimited)