参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current76 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2 V
Transistor Type1 N-Channel
Typical Turn-Off Delay Time450 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time65 ns
RoHS Details
Qg - Gate Charge260 nC
DescriptionMOSFET 600V N-CH 76A POWER MOSFET
Package / CaseTO-247-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time170 ns
BrandROHM Semiconductor
PackagingTube
TARIC8541290000
ImageROHM Semiconductor R6076ENZ4C13
SubcategoryMOSFETs
Product CategoryMOSFET
Unit Weight0.258417 oz
Factory Pack Quantity30
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation735 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time170 ns
Moisture Sensitivity Level1 (Unlimited)