参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min74 S
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current160 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
QualificationAEC-Q101
Minimum Operating Temperature- 55 C
Length9.15 mm
Height0.74 mm
JPHTS8541290100
Typical Turn-On Delay Time18 ns
CAHTS8541290000
Rds On - Drain-Source Resistance1.8 mOhms
Typical Turn-Off Delay Time80 ns
Package / CaseDirectFET-L8
ImageInfineon / IR AUIRF7759L2TR
RoHS Details
Factory Pack Quantity4000
PackagingMouseReel
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 175 C
Width7.1 mm
TARIC8541290000
ManufacturerInfineon
BrandInfineon / IR
Mounting StyleSMD/SMT
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET Automotive 75V 160A 2.3mOhm DirectFET 2
Qg - Gate Charge300 nC
MXHTS85412999
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Fall Time33 ns
CNHTS8541290000
Pd - Power Dissipation125 W
Vds - Drain-Source Breakdown Voltage75 V
Number of Channels1 Channel
Rise Time37 ns