参数项参数值
参数项参数值
DC Current Gain hFE Max35 at 100 uA, 10 V
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO75 V
Maximum DC Collector Current800 mA
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current600 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Height1.7 mm
Length6.7 mm
QualificationAEC-Q101
KRHTS8541299000
ManufacturerNexperia
Minimum Operating Temperature- 65 C
JPHTS8541290100
RoHS Details
CAHTS8541290000
Package / CaseSOT-223-3
Factory Pack Quantity1000
DC Collector/Base Gain hfe Min35
BrandNexperia
TARIC8541290000
Maximum Operating Temperature+ 150 C
Width3.7 mm
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageNexperia PZT2222A,115
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT TRANS SW TAPE-7
Product TypeBJTs - Bipolar Transistors
MXHTS85412999
USHTS8541290075
Unit Weight0.003951 oz
CNHTS8541210000
Part # Aliases933975330115
Pd - Power Dissipation1.15 W
Moisture Sensitivity Level1 (Unlimited)