参数项参数值
参数项参数值
DC Current Gain hFE Max50 at 25 mA, 20 V
Gain Bandwidth Product fT60 MHz
Collector- Base Voltage VCBO300 V
Maximum DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max300 V
Continuous Collector Current50 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min50
Width1.4 mm
Height1 mm
Length3 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
RoHS Details
Unit Weight0.000282 oz
Pd - Power Dissipation250 mW
ImageNexperia BF820,215
Part # Aliases933665120215
BrandNexperia
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerNexperia
USHTS8541210095
DescriptionBipolar Transistors - BJT TRANS HV TAPE-7