参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max40 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
MXHTS85412101
Length2.9 mm
Width1.3 mm
Height1 mm
KRHTS8541219000
Collector-Emitter Saturation Voltage320 mV
DC Collector/Base Gain hfe Min150 at 2 A, 2 V
Minimum Operating Temperature- 55 C
JPHTS8541210101
Package / CaseSOT-23-3
CAHTS8541210000
CNHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingMouseReel
PackagingReel
PackagingCut Tape
ImageDiodes Incorporated DSS4240T-7
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
TARIC8541210000
RoHS Details
DescriptionBipolar Transistors - BJT NPN 40V 2A
Product CategoryBipolar Transistors - BJT
SeriesDSS42
ManufacturerDiodes Incorporated
SubcategoryTransistors
Unit Weight0.000282 oz
USHTS8541210095
Pd - Power Dissipation600 mW