SI4477DY-T1-GE3

SI4477DY-T1-GE3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000052204405

描述：MOSFET P-CH D-S 20V 8-SOIC

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min10 s

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage600 mV

TechnologySi

Id - Continuous Drain Current26.6 A

Transistor PolarityP-Channel

Vgs - Gate-Source Voltage- 8 V, + 8 V

Height1.75 mm

KRHTS8541299000

Typical Turn-On Delay Time42 ns

ManufacturerVishay

Minimum Operating Temperature- 55 C

JPHTS8541290100

RoHS Details

CAHTS8541290000

Rds On - Drain-Source Resistance6.2 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time100 ns

Package / CaseSO-8

Factory Pack Quantity2500

BrandVishay Semiconductors

TARIC8541290000

Maximum Operating Temperature+ 150 C

Width3.9 mm

Mounting StyleSMD/SMT

PackagingCut Tape

PackagingMouseReel

PackagingReel

ImageVishay Semiconductors SI4477DY-T1-GE3

SubcategoryMOSFETs

Qg - Gate Charge125 nC

Product CategoryMOSFET

DescriptionMOSFET -20V Vds 12V Vgs SO-8

Product TypeMOSFET

MXHTS85412999

SeriesSI4

Channel ModeEnhancement

Unit Weight0.006596 oz

Fall Time42 ns

CNHTS8541210000

Part # AliasesSI4477DY-GE3

Pd - Power Dissipation6.6 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage20 V

Number of Channels1 Channel

Rise Time42 ns

Moisture Sensitivity Level1 (Unlimited)