参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current10 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width9.65 mm
Height4.83 mm
Rds On - Drain-Source Resistance550 mOhms
MXHTS85412999
Length10.67 mm
KRHTS8541299000
Qg - Gate Charge63 nC
JPHTS8541290100
CAHTS8541290000
Package / CaseTO-263-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
ImageVishay Semiconductors IRF740STRLPBF
RoHS Details
Channel ModeEnhancement
SeriesIRF
SubcategoryMOSFETs
BrandVishay Semiconductors
Factory Pack Quantity800
Unit Weight0.050717 oz
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 400V N-CH HEXFET D2-PA
ManufacturerVishay
USHTS8541290095
Pd - Power Dissipation125 W
Number of Channels1 Channel