参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current320 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance2 Ohms
Transistor Type1 N-Channel
MXHTS85412101
Qg - Gate Charge0.5 nC
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CAHTS8541210000
Minimum Operating Temperature- 55 C
CNHTS8541210000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541210000
Unit Weight0.000282 oz
RoHS Details
Pd - Power Dissipation340 mW
SeriesDMN62D0U
BrandDiodes Incorporated
ImageDiodes Incorporated DMN62D0UT-7
Product TypeMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
ManufacturerDiodes Incorporated
Number of Channels1 Channel
Product CategoryMOSFET
USHTS8541210095
DescriptionMOSFET N-Ch Enh Mode Fet 60V 20Vgss 0.47W