参数项参数值
参数项参数值
DC Current Gain hFE Max60 at 2 A, 1 V
Gain Bandwidth Product fT85 MHz
ConfigurationSingle
Maximum DC Collector Current16 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current8 A
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO5 V
Width6.22 mm
Length6.73 mm
Collector-Emitter Saturation Voltage1 V
Height2.38 mm
DC Collector/Base Gain hfe Min60
QualificationAEC-Q101
Package / CaseTO-252-3
BrandON Semiconductor
SeriesMJD44H11
MXHTS85412999
ManufacturerON Semiconductor
KRHTS8541299000
SubcategoryTransistors
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
CNHTS8541290000
PackagingCut Tape
PackagingReel
Minimum Operating Temperature- 55 C
Product CategoryBipolar Transistors - BJT
Maximum Operating Temperature+ 150 C
TARIC8541290000
Factory Pack Quantity2500
RoHS Details
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT SILICON Pwr TRANSISTOR
ImageON Semiconductor NJVMJD44H11T4G
Unit Weight0.012381 oz
USHTS8541290095
Pd - Power Dissipation20 W
Part # AliasesNJVMJD44H11T4G-VF01
Moisture Sensitivity Level1 (Unlimited)