参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current68.8 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
MXHTS85412999
CNHTS8541290000
KRHTS8541299000
Rds On - Drain-Source Resistance8.8 mOhms
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Package / CaseTO-252-3
Mounting StyleSMD/SMT
PackagingReel
PackagingCut Tape
PackagingMouseReel
Qg - Gate Charge53.7 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMT10H010LK3-13
Factory Pack Quantity2500
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS 61V-100V
Channel ModeEnhancement
USHTS8541290095
Unit Weight0.011993 oz
Pd - Power Dissipation62.5 W
Number of Channels1 Channel