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SQM120P10_10M1LGE3
厂牌：VISHAY
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000052216034
描述：Trans MOSFET P-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min60 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current120 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
KRHTS8541299000
Length10.67 mm
Height4.83 mm
Typical Turn-On Delay Time20 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
RoHS Details
Rds On - Drain-Source Resistance8.1 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time120 ns
Factory Pack Quantity800
Package / CaseTO-263-3
ImageVishay Semiconductors SQM120P10_10M1LGE3
BrandVishay Semiconductors
Width9.65 mm
TARIC8541290000
Mounting StyleSMD/SMT
ManufacturerVishay
Maximum Operating Temperature+ 175 C
PackagingTube
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET P Ch -100Vds 20Vgs
Qg - Gate Charge190 nC
MXHTS85412999
Product TypeMOSFET
SeriesSQ
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.077603 oz
Fall Time200 ns
CNHTS8541290000
Pd - Power Dissipation375 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time100 ns
Moisture Sensitivity Level1 (Unlimited)