参数项参数值
参数项参数值
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current0.1 A
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage250 mV
Emitter- Base Voltage VEBO6 V
Width4.19 mm
Height5.33 mm
Length5.2 mm
Maximum Operating Temperature+ 150 C
JPHTS8541210101
MXHTS85412101
BrandON Semiconductor / Fairchild
KRHTS8541219000
Mounting StyleThrough Hole
Minimum Operating Temperature- 65 C
Package / CaseTO-92-3
CAHTS8541210000
CNHTS8541210000
PackagingBulk
TARIC8541210000
RoHS Details
Unit Weight0.007055 oz
Pd - Power Dissipation500 mW
USHTS8541210075
DescriptionBipolar Transistors - BJT NPN 45V 100mA HFE/45
ImageON Semiconductor / Fairchild BC547B
SeriesBC547
Factory Pack Quantity10000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerON Semiconductor