参数项参数值
参数项参数值
DC Current Gain hFE Max475
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 80 V
Maximum DC Collector Current- 0.1 A
Collector- Emitter Voltage VCEO Max- 65 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 650 mV
DC Collector/Base Gain hfe Min220
KRHTS8541409029
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541100901
Minimum Operating Temperature- 65 C
CAHTS8541100090
CNHTS8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541100000
Unit Weight0.000176 oz
RoHS Details
SeriesBC856
Pd - Power Dissipation150 mW
BrandComchip Technology
ImageComchip Technology BC856BW-G
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerComchip Technology
Product CategoryBipolar Transistors - BJT
USHTS8541406050
DescriptionBipolar Transistors - BJT -80V, -.1A