参数项参数值
参数项参数值
DC Current Gain hFE Max630
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max65 V
Continuous Collector Current100 mA
ConfigurationDual
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage250 mV
DC Collector/Base Gain hfe Min200
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
RoHS Details
Unit Weight0.000212 oz
SeriesBC856
Pd - Power Dissipation250 mW
BrandInfineon Technologies
Part # AliasesBC856SH6327XT SP000747446 BC856SH6327XTSA1
ImageInfineon Technologies BC 856S H6327
ManufacturerInfineon
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
USHTS8541210075