参数项参数值
参数项参数值
DC Current Gain hFE Max800
Gain Bandwidth Product fT100 MHz
ConfigurationSingle
Collector- Base Voltage VCBO- 80 V
Maximum DC Collector Current- 0.1 A
Collector- Emitter Voltage VCEO Max- 65 V
TechnologySi
KRHTS8541409029
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Minimum Operating Temperature- 65 C
JPHTS8541100901
CAHTS8541100090
ImageComchip Technology BC856AW-G
DescriptionBipolar Transistors - BJT -80V, -.1A
Collector-Emitter Saturation Voltage- 0.65 V
PackagingCut Tape
PackagingReel
PackagingMouseReel
Package / CaseSOT-323-3
Maximum Operating Temperature+ 150 C
DC Collector/Base Gain hfe Min125
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity3000
Mounting StyleSMD/SMT
BrandComchip Technology
Product TypeBJTs - Bipolar Transistors
RoHS Details
TARIC8541100000
ManufacturerComchip Technology
SeriesBC856
SubcategoryTransistors
USHTS8541406050
Unit Weight0.000212 oz
CNHTS8541409000
Pd - Power Dissipation150 mW