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商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current270 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time21 ns
Width7.1 mm
Rds On - Drain-Source Resistance700 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time56 ns
Height0.74 mm
Length9.15 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge220 nC
Mounting StyleSMD/SMT
Package / CaseDirectFET-L8
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity4000
CNHTS8541290000
BrandInfineon / IR
ManufacturerInfineon
Channel ModeEnhancement
TARIC8541290000
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET 40V 1 N-CH HEXFET 1mOhm 220nC
ImageInfineon / IR IRF7739L2TRPBF
Fall Time42 ns
Product TypeMOSFET
SubcategoryMOSFETs
USHTS8541290095
Pd - Power Dissipation125 W
TradenameDirectFET
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time71 ns