参数项参数值
参数项参数值
Forward Transconductance - Min46 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current40 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time4 ns
Rds On - Drain-Source Resistance3.4 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19 ns
Width3.3 mm
Height1.1 mm
Length3.3 mm
MXHTS85412999
Qg - Gate Charge25 nC
KRHTS8541299000
Package / CaseTSDSON-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CAHTS8541290000
Minimum Operating Temperature- 55 C
Fall Time3 ns
CNHTS8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
Unit Weight0.001289 oz
RoHS Details
Pd - Power Dissipation52 W
SeriesOptiMOS 5
Part # AliasesBSZ034N04LS SP001067020
BrandInfineon Technologies
ImageInfineon Technologies BSZ034N04LSATMA1
Product TypeMOSFET
Factory Pack Quantity5000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage40 V
ManufacturerInfineon
Number of Channels1 Channel
Product CategoryMOSFET
Rise Time4 ns
USHTS8541290095
TradenameOptiMOS
DescriptionMOSFET TRENCH <= 40V
Moisture Sensitivity Level1 (Unlimited)