参数项参数值
参数项参数值
Forward Transconductance - Min333 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current423 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time29 ns
Width5.1 mm
Rds On - Drain-Source Resistance650 uOhms
Typical Turn-Off Delay Time87 ns
Height1.1 mm
Length6.25 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CasePower-56-8
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
TARIC8541290000
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryMOSFETs
Channel ModeEnhancement
BrandON Semiconductor / Fairchild
Fall Time16 ns
ManufacturerON Semiconductor
SeriesFDMS8050ET30
Factory Pack Quantity3000
Product TypeMOSFET
Unit Weight0.001993 oz
USHTS8541290095
Product CategoryMOSFET
DescriptionMOSFET FET 30V 0.65 MOHM PQFN56
Pd - Power Dissipation180 W
TradenamePowerTrench Power Clip
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time22 ns
Moisture Sensitivity Level1 (Unlimited)