参数项参数值
参数项参数值
Forward Transconductance - Min97 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage5 V
TechnologySi
Id - Continuous Drain Current104 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time18 ns
Rds On - Drain-Source Resistance9.3 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time41 ns
Width4.4 mm
Height15.65 mm
Length10 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge77 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time39 ns
PackagingTube
TARIC8541290000
ImageInfineon / IR IRFB4115PBF
RoHS Details
Unit Weight0.211644 oz
Factory Pack Quantity1000
Product TypeMOSFET
Pd - Power Dissipation380 W
BrandInfineon / IR
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET MOSFT 150V 104A 11mOhm 77nC Qg
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage150 V
USHTS8541290095
Number of Channels1 Channel
Rise Time73 ns