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IPP200N15N3 G
厂牌：INFINEON
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000052328808
描述：MOSFET N-CH 150V 50A TO220-3
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current50 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time14 ns
Rds On - Drain-Source Resistance20 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time23 ns
Width4.4 mm
Height15.65 mm
Length10 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge23 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541210000
Fall Time6 ns
PackagingTube
TARIC8541290000
ImageInfineon Technologies IPP200N15N3 G
RoHS Details
Unit Weight0.211644 oz
SeriesOptiMOS 3
Factory Pack Quantity500
Product TypeMOSFET
Pd - Power Dissipation150 W
BrandInfineon Technologies
Part # AliasesSP000680884 IPP2N15N3GXK IPP200N15N3GXKSA1
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET N-Ch 150V 50A TO220-3 OptiMOS 3
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage150 V
TradenameOptiMOS
USHTS8541290095
Number of Channels1 Channel
Rise Time11 ns