IPP200N15N3 G

IPP200N15N3 G

厂牌：Infineon Technologies

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000052328853

描述：MOSFET N-CH 150V 50A TO220-3

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商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2 V

TechnologySi

Id - Continuous Drain Current50 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time14 ns

Rds On - Drain-Source Resistance20 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time23 ns

Width4.4 mm

Height15.65 mm

Length10 mm

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge23 nC

Package / CaseTO-220-3

Mounting StyleThrough Hole

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 175 C

Channel ModeEnhancement

CNHTS8541210000

Fall Time6 ns

PackagingTube

TARIC8541290000

ImageInfineon Technologies IPP200N15N3 G

RoHS Details

Unit Weight0.211644 oz

SeriesOptiMOS 3

Factory Pack Quantity500

Product TypeMOSFET

Pd - Power Dissipation150 W

BrandInfineon Technologies

Part # AliasesSP000680884 IPP2N15N3GXK IPP200N15N3GXKSA1

SubcategoryMOSFETs

Product CategoryMOSFET

DescriptionMOSFET N-Ch 150V 50A TO220-3 OptiMOS 3

ManufacturerInfineon

Vds - Drain-Source Breakdown Voltage150 V

TradenameOptiMOS

USHTS8541290095

Number of Channels1 Channel

Rise Time11 ns