参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO- 60 V
Maximum DC Collector Current0.15 A
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 0.15 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
DC Collector/Base Gain hfe Min120
Width1.25 mm
Height0.8 mm
Length2 mm
MXHTS85412999
KRHTS8541219000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
ImageROHM Semiconductor 2SA1576AT106Q
TARIC8541290000
RoHS Details
Unit Weight0.000176 oz
Series2SA1576A
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT PNP 50V 0.15A SOT-323
USHTS8541210075